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Ordering number : ENN8193
2SK3850
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N-Channel Silicon MOSFET
2SK3850
Features
* * *
General-Purpose Switching Device Applications
Best suited for motor drive. Low ON-resistance. Low Qg.
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Tc=25C Conditions Ratings 600 30 0.7 2.8 1.0 15 150 --55 to +150 Unit V V A A W W C C
Electrical Characteristics at Ta=25C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on) Ciss Coss Crss Conditions ID=1mA, VGS=0 VDS=600V, VGS=0 VGS=30V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=0.35A VGS=10V, ID=0.35A VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz Ratings min 600 100 100 2.5 280 560 14 96 29 16 18.5 3.5 typ max Unit V A nA V mS pF pF pF
Marking :K3850
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
31005PB TS IM TA-101202 No.8193-1/4
2SK3850
Continued from preceding page.
Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Diode Forward Voltage Symbol td(on) tr td(off) tf Qg VSD Conditions See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=200V, VGS=10V, ID=0.7A IS=0.7A, VGS=0 Ratings min typ 9 11 16 50 4 0.89 1.2 max Unit ns ns ns ns nC V
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Package Dimensions unit : mm 2083B
6.5 5.0 4 1.5 2.3
Package Dimensions unit : mm 2092B
0.5
6.5 5.0 4
2.3
1.5
0.5
5.5
7.0
0.8 1.6
0.6 1 2 3
0.5
1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP
1 0.6
7.5
0.8
2
3
2.5
1.2
0.85
0.5
1.2
0.85 0.7
5.5
7.0
1.2 0 to 0.2
1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP-FA
2.3
2.3
2.3
2.3
Switching Time Test Circuit
VIN 10V 0V VIN ID=0.35A RL=571 VDD=200V
D
PW=1s D.C.0.5%
VOUT
G
2SK3850 P.G RGS 50
S
No.8193-2/4
2SK3850
Tc= --25C
0.50 0.45 0.40
ID -- VDS
8V 10 V
0.50
ID -- VGS
VDS=10V
C 75
Drain Current, ID -- A
Drain Current, ID -- A
6V
0.35 0.30
0.35 0.30 0.25 0.20
0.25 www..com 0.20 0.15 0.10 0.05 0 0 1 2 3 4 5 6 7 8 9 10
C
0.15 0.10 0.05 0 0 1 2 3
Tc=7 5
VGS=4V
4
25C
5
--25C
25
6
0.40
C
5V
0.45
7 IT08303
Drain-to-Source Voltage, VDS -- V
30
IT08302 30
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
RDS(on) -- Tc
Static Drain-to-Source On-State Resistance, RDS(on) --
Static Drain-to-Source On-State Resistance, RDS(on) --
Tc=25C ID=0.35A
25
25
20
20
15
.3 =0 ID
5A
,V
=1 GS
0V
15
10
10
5
5 2 4 6 8 10 12 14 16 IT09151
0 --60
--40
--20
0
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS -- V
1.0
yfs -- ID
Case Temperature, Tc -- C
1.0
IT09152
IF -- VSD
VGS=0
Forward Transfer Admittance, yfs -- S
VDS=10V
7 5
7 5
Forward Current, IF -- A
25
C -25 =C Tc 75
C
3 2
3 2
0.1 7
Tc= 75 C
7 5
3 2
3 0.01
2
3
5
7
0.1
2
3
5
Drain Current, ID -- A
1000 7 5
1.0 IT08306
7
0.01 0.4
0.5
0.6
0.7
--25
0.8
25
0.1
5
C
C
0.9
1.0 IT09153
SW Time -- ID
3
Ciss, Coss, Crss -- VDS
f=1MHz
Diode Forward Voltage, VSD -- V
VDD=200V VGS=10V Ciss, Coss, Crss -- pF
2
Switching Time, SW Time -- ns
3 2 100 7 5 3 2 10 7 5 3 0.01 2 3 5 7 100 7 5 3 2
Ciss
tf
Coss
td (o ff)
tr
td(on)
0.1 2 3 5 1.0 IT09154 7
Crss
10 7 5 0 5 10 15 20 25 30 IT08309
Drain Current, ID -- A
Drain-to-Source Voltage, VDS -- V
No.8193-3/4
2SK3850
10 9
VGS -- Qg
VDS=200V ID=0.25A
Drain Current, ID -- A
5 3 2 1.0 7 5 3 2 0.1 7 5 3 2
Forward Bias A S O
IDP=2.8A
10
<10s
Gate-to-Source Voltage, VGS -- V
8 7 6
0
s
ID=0.7A
DC
10
10
1m
s
0m
m
s
5 www..com 4 3 2 1 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
op
s
er
ati
on
Operation in this area is limited by RDS(on). Tc=25C Single pulse
2 3 5 7 10 2 3 5 7 100 2 3
0.01 1.0
Total Gate Charge, Qg -- nC
1.2
IT08310 20
PD -- Ta
Allowable Power Dissipation, PD -- W
Drain-to-Source Voltage, VDS -- V
5 7 1000 IT09138
PD -- Tc
Allowable Power Dissipation, PD -- W
1.0
15
0.8
0.6
10
0.4
5
0.2
0 0 20 40 60 80 100 120 140 160
0 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- C
IT09139
Case Temperature, Tc -- C
IT09140
Note on usage : Since the 2SK3850 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2005. Specifications and information herein are subject to change without notice.
PS No.8193-4/4

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